power transistors 1 publication date: february 2003 sjd00127bed 2SC4212 silicon npn triple diffusion planar type for color tv horizontal deflection driver features ? high collector-emitter voltage (base open) v ceo ? to-126b package which requires no insulation plate for installa- tion to the heat sink absolute maximum ratings t a = 25 c electrical characteristics t a = 25 c 3 c unit: mm note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 100 a, i e = 0 350 v collector-emitter voltage (base open) v ceo i c = 5 ma, i b = 0 300 v emitter-base voltage (collector open) v ebo i e = 100 a, i c = 0 7.5 v collector-base cutoff current (emitter open) i cbo v cb = 200 v, i e = 02 a emitter-base cutoff current (collector open) i ebo v eb = 5 v, i c = 02 a forward current transfer ratio h fe v ce = 10 v, i c = 10 ma 40 250 ? collector-emitter saturation voltage v ce(sat) i c = 50 ma, i b = 5 ma 1 v transition frequency f t v cb = 30 v, i e = ? 10 ma, f = 200 mhz 50 80 mhz collector output capacitance c ob v cb = 50 v, i e = 0, f = 1 mhz 4.5 pf (common base, input open circuited) parameter symbol rating unit collector-base voltage (emitter open) v cbo 350 v collector-emitter voltage (base open) v ceo 300 v emitter-base voltage (collector open) v ebo 7.5 v collector current i c 200 ma peak collector current i cp 400 ma collector power p c 1.2 w dissipation 5.0 * junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 1: emitter 2: collector 3: base to-126b-a1 package 8.0 +0.5 ?0.1 1.9 0.1 3.05 0.1 3.8 0.3 11.0 0.5 16.0 1.0 3.2 0.2 0.75 0.1 0.5 0.1 2.3 0.2 4.6 0.2 0.5 0.1 1.76 0.1 123 3.16 0.1 note) * : with a 100 100 2 mm al heat sink
2SC4212 2 sjd00127bed p c ? t a i c ? v ce i c ? v be v ce(sat) ? i c h fe ? i c f t ? i e c ob ? v cb safe operation area 0 6 5 4 3 2 1 0 200 40 80 160 120 collector power dissipation p c (w) ambient temperature t a ( c) (1)with a 100 100 2mm al heat sink (2)without heat sink (1) (2) 020 48 16 12 0 40 80 120 200 160 collector current i c (ma) collector-emitter voltage v ce (v) t c =25?c 1.8ma 1.6ma 1.4ma 1.2ma 1.0ma 0.8ma 0.6ma 0.4ma 0.2ma i b =2.0ma 0 02.0 1.6 1.2 0.8 0.4 240 200 160 120 80 40 base-emitter voltage v be (v) collector current i c (ma) v ce =10v t c =75?c ?5?c 25?c 1 10 100 0.01 10 1 0.1 collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) i c /i b =10 ?5?c 25?c t c =100?c 1 10 100 1 1 000 100 10 forward current transfer ratio h fe collector current i c (ma) v ce =10v t c =100?c ?5?c 25?c ? 1 ? 10 ? 100 ? 1 000 0 40 80 120 200 160 transition frequency f t (mhz) emitter current i e (ma) v cb =30v f=200mhz t c =25?c 1 10 100 0 20 16 12 8 4 collector output capacitance (common base, input open circuited) c ob (pf) collector-base voltage v cb (v) i e =0 f=1mhz t c =25?c 0.001 1 0.01 0.1 1 10 10 100 1 000 collector current i c (a) collector-emitter voltage v ce (v) single pulse t c =25?c t=10ms t=1s dc i cp i c
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